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TPCA8015-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII)
TPCA8015-H
High-Efficiency DCDC Converter Applications
0.50.1 8 1.27 0.40.1 5
Unit: mm
0.05 M A
6.00.3
* * * * * * *
Small footprint due to small and thin package High-speed switching Small gate charge: Qsw = 13 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 4.4 m (typ.) High forward transfer admittance: |Yfs| = 60 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 40 V) Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
5.00.2
0.150.05
1 5.00.2 0.950.05
4
0.595 A 0.1660.05
S 1
0.05 S 4 1.10.2
0.60.1
4.250.2
Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD PD PD EAS IAR
Rating 40 40 20 35 105 45 2.8
Unit V V V A W W
8 5
1,2,3SOURCE 5,6,7,8DRAIN
0.80.1
JEDEC JEITA TOSHIBA
2-5Q1A
Pulsed (Note 1)
Drain power dissipation (Tc = 25) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25) (Note 4) Channel temperature Storage temperature range
Weight: 0.067 g (typ.)
1.6
W
Circuit Configuration
8 7 6 5
114 35 2.7 150 -55 to 150
mJ A mJ C C
EAR Tch Tstg
1
2
3
3.50.2
Maximum Ratings (Ta = 25C)
4GATE
4
Note: For Notes 1 to 5, refer to the next page. This transistor is an electrostatic-sensitive device. Handle with care.
1
2006-01-17
TPCA8015-H
Thermal Characteristics
Characteristic Thermal resistance, channel to case (Tc=25) Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-c) Max 2.78 Unit C/W
Rth (ch-a)
44.6
C/W
Thermal resistance, channel to ambient (t = 10 s) (Note 2b)
Rth (ch-a)
78.1
C/W
Marking (Note 5)
TPCA 8015-H
Type Lot No.
Note 1: The channel temperature should not exceed 150C during use. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
FR-4 25.4 x 25.4 x 0.8 (Unit: mm)
(a)
(b)
Note 3: VDD = 24 V, Tch = 25C (initial), L = 0.1 mH, RG = 25 , IAR = 35 A Note 4: Repetitive rating: pulse width limited by max channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year)
2
2006-01-17
TPCA8015-H
Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Gate resistance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("Miller") charge Gate switch charge tf toff Qg Qgs1 Qgd QSW VDD 32 V, VGS = 10 V, ID = 35 A - Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss Rg tr ton VGS 10 V 0V 4.7 ID = 17.5A VOUT RL =1.11 VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 40 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -20 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 17.5 A VGS = 4.5 V, ID = 17.5 A VDS = 10 V, ID = 17.5 A Min 40 25 1.1 30 Typ. 4.4 6.1 60 2155 200 780 1.4 5 12 10 48 37 21 7 9 13 Max 10 10 2.3 5.4 7.9 ns nC pF Unit A A V V m S
VDD 20 V - Duty < 1%, tw = 10 s = VDD 32 V, VGS = 10 V, ID = 35 A - VDD 32 V, VGS = 5 V, ID = 35 A -
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristic Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = 35 A, VGS = 0 V Min Typ. Max 105 -1.2 Unit A V
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2006-01-17
TPCA8015-H
ID - VDS
50 8 40 6 10 4 4.5 3.6 3.5 3.4 80 100 10 6 4 4.5
ID - VDS
3.8 3.7 Common source Ta = 25C Pulse test 3.5 60 3.4
Drain current ID (A)
30 3.2 20
Common source Ta = 25C Pulse test
Drain current ID (A)
3
40
3.2
3 20 VGS = 2.8V
10
VGS = 2.8V
0 0
0.2
0.4
0.6
0.8
1
0 0
1
2
3
4
5
Drain-source voltage VDS
(V)
Drain-source voltage VDS
(V)
ID - VGS
100
VDS - VGS
1 Common source Ta = 25 Pulse test
80
Pulse test
Drain-source voltage VDS (V)
Common source VDS = 10 V
0.8
Drain current ID (A)
60
0.6
40 Ta = -55C 20 100 25
0.4
0.2
ID = 35 A 18 9
0 0
1
2
3
4
5
6
0 0
2
4
6
8
10
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
Yfs - ID Forward transfer admittance |Yfs| (S)
1000 Common source 100 VDS = 10 V Pulse test 100 Ta = -55C 25 10 100 Common source Ta = 25C Pulse test
RDS (ON) - ID
Drain-source ON-resistance RDS (ON) (m)
10 4.5
1
VGS = 10 V
0.1 0.1
1
10
100
1 0.1
1
10
100
Drain current ID (A)
Drain current ID (A)
4
2006-01-17
TPCA8015-H
RDS (ON) - Ta
12 ID = 35A 18A 8 9A
IDR - VDS
1000 Common source
Drain-source ON-resistance RDS (ON) (m)
10
(A)
Common source Pulse test
Ta = 25C Pulse test 10 4.5 3 100 1
Drain reverse current IDR
VGS = 0 V 10
6
VGS = 4.5 V ID = 9A,18A,35A
4
1
2
VGS = 10 V
0 -80
-40
0
40
80
120
160
0.1 0
-0.2
-0.4
-0.6
-0.8
-1
Ambient temperature
Ta
(C)
Drain-source voltage VDS
(V)
Capacitance - VDS
10000 2.5
Vth - Ta (V)
(pF)
2 Ciss 1000 Coss
Gate threshold voltage Vth
Capacitance C
1.5
1 Common source 0.5 V = 10 V DS ID = 1 mA Pulse test 0 -80 -40
100
Crss Common source VGS = 0 V f = 1 MHz Ta = 25C
10 0.1
1
10
100
0
40
80
120
160
Drain-source voltage VDS
(V)
Ambient temperature
Ta
(C)
Dynamic input/output characteristics
40
ID = 35 A 30 VDS Ta = 25C Pulse test 12
Drain-source voltage VDS
20
VDD = 32 V VGS
8
10
4
0
0
10
20
30
0 40
Total gate charge
Qg
(nC)
Gate-source voltage
VGS (V)
(V)
Common source
16
5
2006-01-17
TPCA8015-H
rth - tw rth (C/W)
1000
(1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Tc=25
(2)
100 (1)
Transient thermal impedance
10
(3) 1
Single - pulse 0.1 0.001 0.01 0.1 1 10 100 1000
Pulse width
tw (s)
PD - Ta
3
(1) Device mounted on a glass-epoxy board (a)
PD - Tc
50
(W)
2.5
(1)
(2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10s
Drain power dissipation PD (W)
160
(Note 2a)
Drain power dissipation PD
40
2 (2) 1.5
30
20
1
0.5
10
0 0
40
80
120
0
0
40
80
120
160
Ambient temperature
Ta
(C)
Case temperature
Tc
(C)
Safe operating area
1000
(A)
100
ID max (Pulsed) * t =1ms *
Drain current ID
ID max (Continuous) 10 DC Operation Tc = 25C 1 * Single - pulse Ta = 25C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 VDSS max 10
10ms *
100
Drain-source voltage VDS
(V)
6
2006-01-17
TPCA8015-H
7
2006-01-17

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